SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW
- Up to 5,000/4,200 MB/s of sequential read/write speeds
- Enhanced power efficiency supporting Modern Standby
- Meet the demands of gaming, business, and creative work
OMR 36.306 2 TB
OMR 62.820
-
Warranty:1 Year Effortless warranty claims with global coverage; shipping costs are on us*. Learn more
- Condition: New
-
Deliver To MuscatDelivered by Tomorrow, Jan 24If you order within 1 Hour, 8 Minutes
Description for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW
990 EVO
Speed that stays ahead
The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.
Specifications
General Feature | |
Application | Client PCs |
Rated Capacity | 2,000GB (1GB=1 Billion bytes by IDEMA) |
Form Factor | M.2 (2280) |
Interface | PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
Dimension (WxHxD) | 80 x 22 x 2.38 mm |
Weight | Max 9.0g |
Storage Memory | Samsung V-NAND TLC |
Controller | Samsung in-house Controller |
Cache Memory | HMB (Host Memory Buffer) |
Special Feature | |
TRIM Support | Supported |
S.M.A.R.T Support | Supported |
GC (Garbage Collection) | Auto Garbage Collection Algorithm |
Encryption Support | AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive) |
WWN Support | Not supported |
Device Sleep Mode Support | Yes |
Performance | |
Sequential Read | Up to 5,000 MB/s |
Sequential Write | Up to 4,200 MB/s |
Random Read (4KB, QD32) | Up to 700,000 IOPS |
Random Write (4KB, QD32) | Up to 800,000 IOPS |
Random Read (4KB, QD1) | Up to 20,000 IOPS |
Random Write (4KB, QD1) | Up to 90,000 IOPS |
Environment | |
Average Power Consumption | Read 5.5 W / Write 4.7 W |
Power Consumption (Idle) | Typical 60 mW |
Power Consumption (Device Sleep) | Typical 5 mW |
Allowable Voltage | 3.3 V ± 5 % |
Reliability (MTBF) | 1.5 Million Hours |
Operating Temperature | 0 - 70 ℃ |
Shock | 1,500 G & 0.5 ms (Half sine) |
Installation Kit | Not Available |
Management SW | Magician Software for SSD management |
2-3 Days Delivery in Oman
We offer express delivery to Muscat, Salalah, Seeb, Sohar, and other cities in Oman for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW.
Best Price Guarantee
We offer the best price for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW in Oman. Buy now with the best price!
Read More
Specifications for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW
- 990 EVO
- 185377
- 17 May, 2024
- 0.10 Kg
- 2.00 cm x 10.00 cm x 14.51 cm
- M.2
Reviews for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW
-
SAMSUNG 2TB 990 EVO PCIe 4.0 X4 / 5.0 X2 M.2 Internal SSD, Sequential Writes Up To 4200 MB/s & Reads Up To 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW
Mustafa A.
Capacity: 1 TB |Verified Purchase