SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW Buy, Best Price in Oman, Muscat, Salalah
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SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW

Offer
Select Capacity: 2 TB
1 TB
OMR 36.306
2 TB
OMR 62.820
  • Warranty:
    1 Year    Effortless warranty claims with global coverage; shipping costs are on us*. Learn more
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OMR 62.820
10% OFF Was OMR 69.861
Sold By: Microless
Fulfilled by Microless
In Stock
  •  Condition: New
  • Deliver To Muscat
    Delivered by Tomorrow, Jan 24
    If you order within 1 Hour, 8 Minutes

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Description for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW

990 EVO

 

Speed that stays ahead

The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.

 

 

Specifications

 

General Feature
Application Client PCs
Rated Capacity 2,000GB (1GB=1 Billion bytes by IDEMA)
Form Factor M.2 (2280)
Interface PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0
Dimension (WxHxD) 80 x 22 x 2.38 mm
Weight Max 9.0g
Storage Memory Samsung V-NAND TLC
Controller Samsung in-house Controller
Cache Memory HMB (Host Memory Buffer)
Special Feature
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Performance
Sequential Read Up to 5,000 MB/s
Sequential Write Up to 4,200 MB/s
Random Read (4KB, QD32) Up to 700,000 IOPS
Random Write (4KB, QD32) Up to 800,000 IOPS
Random Read (4KB, QD1) Up to 20,000 IOPS
Random Write (4KB, QD1) Up to 90,000 IOPS
Environment
Average Power Consumption Read 5.5 W / Write 4.7 W
Power Consumption (Idle) Typical 60 mW
Power Consumption (Device Sleep) Typical 5 mW
Allowable Voltage 3.3 V ± 5 %
Reliability (MTBF) 1.5 Million Hours
Operating Temperature 0 - 70 ℃
Shock 1,500 G & 0.5 ms (Half sine)
Installation Kit Not Available
Management SW Magician Software for SSD management


2-3 Days Delivery in Oman
We offer express delivery to Muscat, Salalah, Seeb, Sohar, and other cities in Oman for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW.

Best Price Guarantee
We offer the best price for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW in Oman. Buy now with the best price!


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Specifications for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW

General
Brand
Model
  • 990 EVO
Microless SKU
  • 185377
Date first available
  • 17 May, 2024
Shipping Weight
  • 0.10 Kg
Shipping Dimensions
  • 2.00 cm x 10.00 cm x 14.51 cm
Form Factor
  • M.2


Reviews for SAMSUNG 2TB 990 EVO PCIe 4.0 x4 / 5.0 x2 M.2 Internal SSD, Sequential Writes up to 4200 MB/s & Reads up to 5000 MB/s, V-NAND Flash Technology, 600TB TBW, AES 256-Bit Encryption, Black | MZ-V9E2T0BW

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  • Mustafa A.
    Capacity: 1 TB |
     Verified Purchase

    31 October, 2024
    Really fast delivery , working well
    0